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MM912G634CM1AE View Datasheet(PDF) - Freescale Semiconductor

Part Name
Description
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MM912G634CM1AE
Freescale
Freescale Semiconductor Freescale
MM912G634CM1AE Datasheet PDF : 345 Pages
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Electrical Characteristics
Table 24. Static Electrical Characteristics - Temperature Sensor - TSENSE
Ratings
Temperature represented by a ADCIN Voltage of 1.984 V(22)
Note:
22. Guaranteed by design and characterization.
Symbol
Min
Typ
Max
Unit
T1.984V
145
150
155
°C
Table 25. Static Electrical Characteristics - Supply Voltage Sense - VSENSE and VS1SENSE
Ratings
Symbol
Min
Typ
Max
Unit
VSENSE Input Divider Ratio (RATIOVSENSE = VVSENSE / ADCIN)
5.5 V < VSUP < 27 V
RATIOVSENS
-
E
10.8
5.0%
VSENSE error - whole path (VSENSE pad to Digital value)
ErVSENSE
-
-
5.0
%
VS1SENSE Input Divider Ratio (RATIOVS1SENSE = VVS1SENSE / ADCIN)
5.5 V < VSUP < 27 V
RATIOVS1SE
NSE
-
10.8
5.0%
VS1SENSE error - whole path (VS1 pad to Digital value)
ErVS1SENSE
-
-
5.0
%
VSENSE Series Resistor
VSENSE Capacitor (optional)(23)
RVSENSE
9.5
CVSENSE
-
10
10.5
kOhm
100
-
nF
Note:
23. The ESD behavior specified in Section 3.8, “ESD Protection and Latch-up Immunity is guaranteed without the optional capacitor.
3.5.2
Static Electrical Characteristics MCU Die
3.5.2.1
I/O Characteristics
This section describes the characteristics of all I/O pins except EXTAL, XTAL, TEST and supply pins.
Table 26. 5.0 V I/O Characteristics for PTA, PTE, RESET and BKGD Pins
Ratings
Symbol
Min
Input high voltage
Input high voltage
VIH
0.65*VDDRX
VIH
-
Input low voltage
VIL
-
Input low voltage
VIL
VSSRX - 0.3
Input hysteresis
VHYS
-
Input leakage current (pins in high-impedance input mode)
VIN = VDDRX or VSSRX
IIN
-1.0
Output high voltage (pins in output mode) IOH = -4.0 mA
Output low voltage (pins in output mode) IOL = +4.0 mA
VOH
VOL
VDDRX – 0.8
-
Internal pull-up resistance (VIHmin > input voltage > VILmax)
RPUL
25
Internal pull-down resistance (VIHmin > input voltage > VILmax)
RPDH
25
Input capacitance
Injection current(24)
Cin
-
Single pin limit
Total device Limit, sum of all injected currents
IICS
-2.5
IICP
-25
Note:
24. Refer to Section 3.8, “ESD Protection and Latch-up Immunity” for more details.
Typ
Max
Unit
-
-
V
-
VDDRX +
0.3
V
-
0.35*VDDR
V
X
-
-
V
250
-
mV
-
1.0
A
-
-
V
-
0.8
V
-
50
k
-
50
k
6.0
-
pF
-
2.5
mA
-
25
MM912_634 Advance Information, Rev. 4.0
Freescale Semiconductor
21

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