FS50UM-3-A8 View Datasheet(PDF) - Renesas Electronics
Part Name
Description
View to exact match
FS50UM-3-A8 Datasheet PDF : 7 Pages
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FS50UM-3
Transfer Characteristics (Typical)
100
Tc = 25°C
VDS = 10V
80
Pulse Test
60
40
20
0
0
4
8
12 16 20
Gate-Source Voltage VGS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
2
104
7
Ciss
5
3
2
103
7
5
Coss
3
Crss
2
102 Tch = 25°C
7 f = 1MHz
5 VGS = 0V
3
2
3
5 7100
23
5 7 101
23
5 7 102 2 3
Drain-Source Voltage VDS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
20
Tch = 25°C
ID = 50A
16
VDS = 50V
12
8
80V
100V
4
0
0
40 80 120 160 200
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current (Typical)
102
7 VDS = 10V
5 Pulse Test
4
3
2
101
7
5
4
3
2
TC = 25°C
75°C
125°C
100100 2 3 4 5 7 101 2 3 4 5 7 102
Drain Current ID (A)
Switching Characteristics (Typical)
103
7
5
4
3
2
102
7
5
4
3
2
101100
td(off)
tf
tr
td(on)
Tch = 25°C
VDD = 80V
VGS = 10V
RGEN = RGS = 50Ω
2 3 4 5 7 101 2 3 4 5 7 102
Drain Current ID (A)
Source-Drain Diode Forward
Characteristics (Typical)
100
80 Tc = 125°C
VGS = 0V
Pulse Test
60
75°C
25°C
40
20
0
0 0.4 0.8 1.2 1.6 2.0
Source-Drain Voltage VSD (V)
Rev.2.00 Aug 07, 2006 page 4 of 6
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