FS50UM-3-A8 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

View to exact match

FS50UM-3-A8

High-Speed Switching Use Nch Power MOS FET

Renesas Electronics 

FS50UM-3

Electrical Characteristics

Parameter

Drain-source breakdown voltage

Gate-source leakage current

Drain-source leakage current

Gate-source threshold voltage

Drain-source on-state resistance

Drain-source on-state voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Source-drain voltage

Thermal resistance

Reverse recovery time

Symbol

V(BR)DSS

IGSS

IDSS

VGS(th)

rDS(ON)

VDS(ON)

| yfs |

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VSD

Rth(ch-c)

trr

(Tch = 25°C)

Min Typ Max Unit

Test Conditions

150

—

—

V

ID = 1 mA, VGS = 0 V

—

—

±0.1

µA VGS = ±20 V, VDS = 0 V

—

—

0.1

mA VDS = 150 V, VGS = 0 V

2.0

3.0

4.0

V

ID = 1 mA, VDS = 10 V

—

24

31

mΩ ID = 25 A, VGS = 10 V

—

0.600 0.775

V

ID = 25 A, VGS = 10 V

—

55

—

S

ID = 25 A, VDS = 10 V

—

6540

—

pF VDS = 10 V, VGS = 0 V,

—

860

—

pF f = 1MHz

—

360

—

pF

—

95

—

—

155

—

—

380

—

ns VDD = 80 V, ID = 25 A,

ns VGS = 10 V,

ns

RGEN = RGS = 50 Ω

—

180

—

ns

—

1.0

1.5

V

IS = 25 A, VGS = 0 V

—

—

1.0 °C/W Channel to case

—

130

—

ns IS = 50 A, dis/dt = –100 A/µs

Rev.2.00 Aug 07, 2006 page 2 of 6

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