DG858BW45 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
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DG858BW45 Datasheet PDF : 19 Pages
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DG858BW45
CURVES
2.5
12.5
2.0
10.0
1.5
7.5
1.0
5.0
VGT
0.5
2.5
IGT
0
0
-50 -25 0 25 50 75 100 125 150
Junction temperature Tj - (°C)
Figure 2. Maximum gate trigger voltage/current vs junction temperature
4000
3000
Measured under pulse
conditions.
IG(ON) = 10A
Half sine wave 10ms
Tj = 25°C
2000
Tj = 125°C
1000
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous on-state voltage VTM - (V)
Figure 3. On-state characteristics
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