DG858BW45 View Datasheet(PDF) - Dynex Semiconductor
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Description
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DG858BW45 Datasheet PDF : 19 Pages
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DG858BW45
4500
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3000
Conditions:
Tj = 125°C
IFGM = 40A
Cs = 3.0µF
Rs = 10 Ohms
dIT/dt = 300A/µs
dIFG/dt = 40A/µs
2500
VD = 3000V
VD = 2000V
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1000
VD = 1000V
500
0
0
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On-state current IT - (A)
Figure 11. Turn-on energy vs on-state current
3000
Conditions:
IT = 3000A
Tj = 125°C
Cs = 3.0µF
Rs = 10 Ohms
dIT/dt = 300A/µs
dIFG/dt = 40A/µs
5000
4500
4000
3500
Conditions:
IT = 3000A
Tj = 125°C
Cs = 3.0µF
Rs = 10 Ohms
IFGM = 40A
dIFG/dt = 40A/µs
VD = 3000V
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5000
3000
2500
VD = 2000V
4000
3000
VD = 2250V
2000
VD = 2000V
1000
VD = 1000V
0
0 10 20 30 40 50 60 70 80
Peak forward gate current IFGM - (A)
Figure 12. Turn-on energy vs peak forward gate current
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VD = 1000V
500
0
50 100 150 200 250 300 350
Rate of rise of on-state current dIT/dt - (A/µs)
Figure 13. Turn-on energy vs rate of rise of
on-state current
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