DG858BW45 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
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DG858BW45 Datasheet PDF : 19 Pages
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DG858BW45
10/19
9000
Conditions:
8000
Tj = 25°C
Cs = 3.0µF
A
dIGQ/dt = 40A/µs
7000
B
6000
C
5000
4000
3000
2000
1000
0
0
A: VDM = 100% VDRM
B: VDM = 75% VDRM
C: VDM = 50% VDRM
500
1000
1500
2000
2500
On-state current IT - (A)
Figure 16. Turn-off energy loss vs on-state current
3000
9000
8500
8000
Conditions:
IT = 3000A
Tj = 25°C
Cs = 3.0µF
VDM = 100% VDRM
7500
7000
VDM = 75% VDRM
6500
6000
5500
VDM = 50% VDRM
5000
4500
4000
20 25 30 35 40 45 50 55 60
Rate of rise of reverse gate current dIGQ/dt- (A/µs)
Figure 17. Turn-off energy vs rate of rise of reverse gate current
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