DG858BW45(2000) View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

View to exact match

DG858BW45
(Rev.:2000)

Gate Turn-off Thyristor

Dynex Semiconductor 

DG858BW45

4500

4000

3500

3000

Conditions:

Tj = 25˚C

IFGM = 40A

Cs = 3µF

Rs = 10 Ohms

dIT/dt = 300A/µs

dIFG/dt = 40A/µs

2500

2000

VD = 3000V

VD = 2000V

1500

1000

VD = 1000V

500

0

0

500

1000

1500

2000

2500

On-state current IT - (A)

Figure 9. Turn-on energy vs on-state current

8000

7000

6000

Conditions:

IT = 3000A, Tj = 25˚C,

Cs = 3.0µF, Rs = 10 Ohms

dIT/dt = 300A/µs,

dIFG/dt = 40A/µs

5000

3000

4000

3000

2000

1000

VD = 3000V

VD = 2000V

VD = 1000V

0

0 10 20 30 40 50 60 70 80

Peak forward gate current IFGM- (A)

Figure 10. Turn-on energy vs peak forward gate current

7/19

Share Link: