DG858BW45(2000) View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

View to exact match

DG858BW45
(Rev.:2000)

Gate Turn-off Thyristor

Dynex Semiconductor 

DG858BW45

0.015

4000

3500

3000

Conditions:

Tj = 125˚C,

VDM = VDRM

dIGQ/dt = 40A/µs

2500

2000

1500

1000

0 1.0 2.0 3.0 4.0 5.0 6.0

Snubber capacitance Cs - (µF)

Figure 4. Maximum dependence of ITCM on Cs

dc

0.010

0.005

0

0.001

0.01

0.1

1.0

Time - (s)

10

100

Figure 5. Maximum (limit) transient thermal impedance - double side cooled

50

40

30

20

10

0

0.0001

0.001

0.01

0.1

1.0

Pulse duration - (s)

Figure 6. Surge (non-repetitive) on-state current vs time

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