DG858BW45(2000) View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

View to exact match

DG858BW45
(Rev.:2000)

Gate Turn-off Thyristor

Dynex Semiconductor 

CHARACTERISTICS

Tj = 125oC unless stated otherwise

Symbol

Parameter

VTM On-state voltage

IDM

Peak off-state current

IRRM

Peak reverse current

VGT

Gate trigger voltage

IGT

Gate trigger current

IRGM

EON

td

tr

E

OFF

t

gs

tgf

tgq

Q

GQ

Q

GQT

IGQM

Reverse gate cathode current

Turn-on energy

Delay time

Rise time

Turn-off energy

Storage time

Fall time

Gate controlled turn-off time

Turn-off gate charge

Total turn-off gate charge

Peak reverse gate current

DG858BW45

Conditions

At 4000A peak, IG(ON) = 10A d.c.

VDRM = 4500V, VRG = 0V

At VRRM

VD = 24V, IT = 100A, Tj = 25oC

VD = 24V, IT = 100A, Tj = 25oC

VRGM = 16V, No gate/cathode resistor

VD = 2000V

IT = 3000A, dIT/dt = 300A/µs

I

FG

=

40A,

rise

time

<

1.0µs

IT = 3000A, VDM = VDRM

Snubber Cap Cs = 3.0µF,

di /dt

GQ

=

40A/µs

Min. Max. Units

- 4.0 V

- 100 mA

-

50 mA

- 1.2 V

- 4.0 A

-

50 mA

- 2700 mJ

-

2.0 µs

-

6.0 µs

- 13500 mJ

- 25.0 µs

-

2.5 µs

- 27.5 µs

- 12000 µC

- 24000 µC

- 950 A

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