DG648BH45 View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

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DG648BH45

Gate Turn-off Thyristor

Dynex Semiconductor 

DG648BH45

4000

Conditions:

IG(ON) = 7A

3000

dc

2000

180°

120°

60°

30°

1000

0

0

500

1000

1500 70 80 90 100 120 130

Mean on-state current IT(AV) - (A)

Maximum permissible case

temperature - (°C)

Fig.6 Steady state rectangluar wave conduction loss - double side cooled

3000

2000

Conditions:

IG(ON) = 7A

180°

120°

90°

60°

30°

1000

0

0 200 400 600 800 1000 1200 1400 80 90 100 120 130

Mean on-state current IT(AV) - (A)

Maximum permissible case

temperature - (°C)

Fig.7 Steady state sinusoidal wave conduction loss - double side cooled

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