DG648BH45 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
View to exact match
DG648BH45 Datasheet PDF : 18 Pages
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DG648BH45
5000
4000
Conditions:
Tj = 25°C,
CS = 2.0µF,
dIGQ/dt = 40A/µs
3000
2000
VDRM
0.75x VDRM
0.5x VDRM
1000
0
0
500
1000
1500
2000
2500
On-state current IT - (A)
Fig.15 Turn-off energy vs on-state current
6000
5000
Conditions:
Tj = 25°C,
CS = 2.0µF,
IT = 2000A
VDRM
3000
4000
0.75x VDRM
3000
0.5x VDRM
10/19
2000
20
30
40
50
60
70
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.16 Turn-off energy vs rate of rise of reverse gate current
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