DG648BH45 View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

View to exact match

DG648BH45

Gate Turn-off Thyristor

Dynex Semiconductor 

DG648BH45

CURVES

2.0

8.0

1.5

6.0

1.0

4.0

VGT

0.5

2.0

IGT

0

0

-50 -25 0 25 50 75 100 125 150

Junction temperature Tj - (°C)

Fig.1 Maximum gate trigger voltage/current vs junction temperature

4000

Measured under pulse conditions.

IG(ON) = 7A

Half sine wave 10ms

3000

Tj = 25°C

Tj = 125°C

2000

1000

0

0

1.0

2.0

3.0

4.0

5.0

Instantaneous on-state voltage VTM - (V)

Fig.2 On-state characteristics

4/19

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