MFG CO.
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MITSUBISHI ELECTRIC
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DESCRIPTION
RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications.
FEATURES
High power and High Gain:
Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz
Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz
High Efficiency: 60%typ.on VHF Band
High Efficiency: 55%typ.on UHF Band
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
Part Name
Description
PDF
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