RD09MUP2(2006) Datasheet - MITSUBISHI ELECTRIC
Part Name
RD09MUP2
Other PDF
PDF
page
7 Pages
File Size
148.9 kB
MFG CO.
MITSUBISHI ELECTRIC
DESCRIPTION
RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.
FEATURES
• High power gain:
Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
• High Efficiency: 50%min. (520MHz)
• Integrated gate protection diode
APPLICATION
For output stage of high power amplifiers in UHF band mobile radio sets.
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