RD16HHF1(2008) Datasheet - MITSUBISHI ELECTRIC
Part Name
RD16HHF1
Other PDF
PDF
page
8 Pages
File Size
282.8 kB
MFG CO.
MITSUBISHI ELECTRIC
DESCRIPTION
RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.
FEATURES
High power gain:
Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz
APPLICATION
For output stage of high power amplifiers in HF band mobile radio sets.
Part Name
Description
PDF
MFG CO.
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W ( Rev : 2010 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W ( Rev : 2008 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W ( Rev : 2010 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
Quanzhou Jinmei Electronic
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W ( Rev : 2010 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W ( Rev : 2006 )
MITSUBISHI ELECTRIC
Share Link: