RD00HHS1 Datasheet - Quanzhou Jinmei Electronic
Part Name
RD00HHS1
Other PDF
no available.
PDF
page
6 Pages
File Size
133.5 kB
MFG CO.
Quanzhou Jinmei Electronic
DESCRIPTION
RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.
FEATURES
High power gain
Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz
APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets.
Part Name
Description
PDF
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