RD16HHF1 Datasheet - MITSUBISHI ELECTRIC
Part Name
RD16HHF1
PDF
page
9 Pages
File Size
572 kB
MFG CO.
MITSUBISHI ELECTRIC
DESCRIPTION
RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.
FEATURES
High power gain:
Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz
APPLICATION
For output stage of high power amplifiers in HF band mobile radio sets.
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