N0604N-S19-AY Datasheet - Renesas Electronics
Part Name
N0604N-S19-AY
Description
Other PDF
no available.
PDF
page
8 Pages
File Size
125.6 kB
MFG CO.
Renesas Electronics
Description
The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATUREs
• Low on-state resistance
RDS (on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 41 A)
• Low input capacitance
Ciss = 4150 pF TYP. (VDS = 25 V, VGS = 0 V)
• High current
ID(DC) = ±82 A
• RoHS Compliant
Part Name
Description
PDF
MFG CO.
6.4 A, 60 V, RDS(ON) 82 mΩ N-Channel Enhancement MOSFET ( Rev : 2010 )
Secos Corporation.
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