MFG CO.
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NXP Semiconductors.
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General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
FEATUREs and benefits
• Trench MOSFET technology
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction
• Tin-plated 100 % solderable side pads for optical solder inspection
• AEC-Q101 qualified
APPLICATIONs
• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits
Part Name
Description
PDF
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