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MH4S64CBMD-12 Datasheet - MITSUBISHI ELECTRIC

MH4S64CBMD image

Part Name
MH4S64CBMD-12

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page
47 Pages

File Size
463.9 kB

MFG CO.
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MH4S64CBMD is 4194304-word by 64-bit Synchronous DRAM module. This consists of sixteen industry standard 2Mx8 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP.
The mounting of TSOP on a card edge Dual Inline package provides any application where high densities and large quantities of memory are required.
This is a socket type - memory modules, suitable for easy interchange or addition of modules.


FEATURES
• Utilizes industry standard 2M x 8 Synchronous DRAMs TSOP and industry standard EEPROM in TSSOP
• 168-pin (84-pin dual in-line package)
• single 3.3V±0.3V power supply
• Clock frequency 100MHz/83MHz/67MHz
• Fully synchronous operation referenced to clock rising edge
• Dual bank operation controlled by BA(Bank Address)
• /CAS latency- 1/2/3(programmable)
• Burst length- 1/2/4/8(programmable)
• Burst type- sequential / interleave(programmable)
• Column access - random
• Auto precharge / All bank precharge controlled by A10
• Auto refresh and Self refresh
• 4096 refresh cycle /64ms
• LVTTL Interface


APPLICATION
    main memory or graphic memory in computer systems

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