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MH4V6445BXJJ-6S Datasheet - MITSUBISHI ELECTRIC

MH4V6445BXJJ image

Part Name
MH4V6445BXJJ-6S

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page
26 Pages

File Size
148.3 kB

MFG CO.
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
This is family of 4194304 - word by 64 - bit dynamic RAM module. This consists of four industry standard 4Mx16 dynamic RAMs in TSOP and one industry EEPROM in TSSOP.
The mounting of TSOP on a card edge dual in line package provides any application where high densities and large of quantities memory are required.
This is a socket-type memory module,suitable for easy interchange of addition of modules.


FEATURES
• single 3.3V± 0.3V supply
• Low stand-by power dissipation
   7.2mW- - - - - - - - - LVCMOS input level
• operating power dissipation
   MH4V6445BXJJ-5,5S - - - - 2016 mW(max.)
   MH4V6445BXJJ-6,6S - - - - 1872 mW(max.)
• Self refresh capability*
   Self refresh current - - - - 1600 uA(max.)
• All input, output LVTTL compatible and low capacitance
• Utilizes industry standard 4Mx16 RAMs in TSOP and industry standard EEPROM in TSSOP.
• Includes decoupling capacitor(0.22uFx4)
• Hyper page mode , Read-modify-write, CAS before RAS refresh,Hidden refresh capabilities.
• Early-write mode,OE and W to control output buffer impedance.


APPLICATION
Main memory unit for computer,Microcomputer memory,Refresh memory for CRT.
*:Applicable to self refresh version(MH4V645/6445AXJJ-5S,-6S) only

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Part Name
Description
PDF
MFG CO.
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268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
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EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM
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EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
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268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
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268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
MITSUBISHI ELECTRIC
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
MITSUBISHI ELECTRIC

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