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MGFC45V3642A_04 Datasheet - MITSUBISHI ELECTRIC

MGFC45V3642A image

Part Name
MGFC45V3642A_04

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3 Pages

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224.8 kB

MFG CO.
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.


FEATURES
    Class A operation
    Internally matched to 50(ohm) system
    High output power P1dB = 32W (TYP.) @ f=3.6 - 4.2 GHz
    High power gain GLP = 11 dB (TYP.) @ f=3.6 - 4.2GHz
    High power added efficiency P.A.E. = 36 % (TYP.) @ f=3.6 - 4.2GHz
    Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.


APPLICATION
    item 01 : 3.6 - 4.2 GHz band power amplifier
    item 51 : 3.6 - 4.2 GHz band digital radio communication

Page Link's: 1  2  3 

Part Name
Description
PDF
MFG CO.
3.6 ~ 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET ( Rev : 1997 )
MITSUBISHI ELECTRIC
3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.6 ~ 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
Mitsumi
3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET . ( Rev : 1998 )
MITSUBISHI ELECTRIC
4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
Mitsumi
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
Mitsumi
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
Mitsumi

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