DESCRIPTION
The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

FEATURES
High output power 
       Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm
High power gain
      Gp=13dB(TYP.) @f=1.9GHz
High power added efficiency
   nadd=48%(TYP.) @f=1.9GHz,Pin=18dBm
Hermetic Package

APPLICATION
For UHF Band power amplifiers