L,S BAND POWER GaAs FET

DESCRIPTION
The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.

FEATURES
• High output power
    Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm
• High power gain
    Gp=8dB(TYP.) @f=1.65GHz,Pin=26dBm
• High power added efficiency
    ηadd =40%(TYP.) @f=1.65GHz,Pin=26dBm

APPLICATION
    For UHF Band power amplifiers