DESCRIPTION
The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
FEATURES
High output power
Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm
High power gain
Gp=13dB(TYP.) @f=1.9GHz
High power added efficiency
nadd=48%(TYP.) @f=1.9GHz,Pin=18dBm
Hermetic Package
APPLICATION
For UHF Band power amplifiers