Description
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD BY 8-BIT) CMOS SRAM Stacked - µ MCP (micro Multi Chip Package) MFG CO.
Renesas Electronics
Description
The M6MGB/T331S4BKT is a Stacked micro Multi Chip Package (S- mMCP) that contents 32M-bit Flash memory and 4M-bit Static RAM in a 52-pin TSOP for lead free use.
32M-bit Flash memory is a 4,194,304 bytes / 2,097,152 words, 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR (Divided bit-line NOR) architecture for the memory cell.
4M-bit SRAM is a 524,288 bytes / 262,144 words asynchronous SRAM fabricated by silicon-gate CMOS technology.
M6MGB/T331S4BKT is suitable for the application of the mobile-communication-system to reduce both the mount space and weight.
M6MGB/T331S4BKT provides for Software Lock Release function. Usually, all memory blocks are locked and can not be programmed or erased, when F-WP# is low. Using Software Lock Release function, program or erase operation can be executed.
FEATUREs
Access Time Flash 70ns (Max.)
SRAM 70ns (Max.)
Supply Voltage VCC=2.7 ~ 3.0V
Ambient Temperature Ta=-40 ~ 85 °C
Package 52pin TSOP(Type-II),
Lead pitch 0.4mm
Outer-lead finishing:Sn-Cu
APPLICATION
Mobile communication products
Part Name
Description
PDF
MFG CO.
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY
Renesas Electronics
16,777,216-BIT(1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT(262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package)
MITSUBISHI ELECTRIC
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package)
MITSUBISHI ELECTRIC
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
MITSUBISHI ELECTRIC
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
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ACCUTEK MICROCIRCUIT CORPORATION
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MITSUBISHI ELECTRIC
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
Mitsumi
