DESCRIPTION
The MITSUBISHI M6MGB/T162S2BVP is a Stacked Multi  Chip Package (S-MCP) that contents 16M-bits flash memory and 2M-bits Static RAM in a 48-pin TSOP (TYPE-I).
16M-bits Flash memory is a 1048576 words, 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit  and DINOR(DIvided bit-line NOR) architecture for the memory cell.
2M-bits SRAM is a 262144bytes unsynchronous SRAM fabricated by silicon-gate CMOS technology. M6MGB/T162S2BVP is suitable for the application of the mobile-communication-system to reduce both the mount space and weight .

• Access time                                        
                         Flash Memory           90ns ( Max.)
                         SRAM                        85ns (Max.)
• Supply voltage                                 Vcc=2.7 ~ 3.6V
• Ambient temperature                     
                         W version                  Ta=-20 ~ 85°C
• Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch
FEATURES

APPLICATION
   Mobile communication  products