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M54567P Datasheet - MITSUBISHI ELECTRIC

M54567P image

Part Name
M54567P

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page
4 Pages

File Size
58.2 kB

MFG CO.
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
M54567P and M54567FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.


FEATURES
● High breakdown voltage (BVCEO ≥ 50V)
● High-current driving (Ic(max) = 1.5A)
● With clamping diodes
● Driving available with NMOS IC output
● Wide operating temperature range (Ta = –20 to +75°C)


APPLICATION
   Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and power amplification

Page Link's: 1  2  3  4 

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