General Description
The LPM3414 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suitable for low voltage
applications, notebook computer power management and other battery powered circuits where high-side switching is needed.

FEATUREs
✦ 20V/3A, RDS(ON)＜ 62mΩ(max.)@VGS=4.5V
✦ 20V/2.5A, RDS(ON)＜ 86mΩ(max.)@VGS=2.5V
✦ Super high density cell design for extremely low
   RDS(ON)
✦ SOT23 Package

APPLICATIONs
✧ Portable Media Players/MP3 players
✧ Cellular and Smart mobile phone
✧ LCD
✧ DSC Sensor
✧ Wireless Card