datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  Unisonic Technologies  >>> UT3419 PDF

UT3419(2012) Datasheet - Unisonic Technologies

UT3419 image

Part Name
UT3419

Other PDF
  2014   lastest PDF  

PDF
DOWNLOAD     

page
3 Pages

File Size
136.2 kB

MFG CO.
UTC
Unisonic Technologies UTC

DESCRIPTION
The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS(ON), low gate charge. The gate voltage is as low as 2.5V. It is ESD protection.
The UTC UT3419 can be applied in PWM applications or used as a load switch.


FEATURES
* ESD Rating Is Up To 2000V HBM
* RDS(ON) < 75mΩ (VGS = -10V)
   RDS(ON) < 95mΩ (VGS = -4.5V)
   RDS(ON) < 145mΩ (VGS = -2.5V)


Part Name
Description
PDF
MFG CO.
P-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
P-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
P-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
P-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
P-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
P-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
P-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
P-Channel Enhancement Mode Field Effect Transistor
Chino-Excel Technology
P-Channel Enhancement Mode Field Effect Transistor
ACE Technology Co., LTD.
P-Channel Enhancement Mode Field Effect Transistor
Chino-Excel Technology

Share Link: GO URL

Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]