datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  Renesas Electronics  >>> K4144 PDF

K4144 Datasheet - Renesas Electronics

2SK4144 image

Part Name
K4144

Other PDF
  no available.

PDF
DOWNLOAD     

page
10 Pages

File Size
294.3 kB

MFG CO.
Renesas
Renesas Electronics Renesas

DESCRIPTION
The 2SK4144 is N-channel MOS Field Effect Transistor designed for high current switching applications.


FEATURES
• Low on-state resistance
   RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 35 A)
   RDS(on)2 = 7.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
• Low input capacitance
   Ciss = 5500 pF TYP. (VDS = 10 V)
• Built-in gate protection diode


Part Name
Description
PDF
MFG CO.
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics

Share Link: GO URL

Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]