NP88N055EHE Datasheet - Renesas Electronics
Part Name
NP88N055EHE
Description
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page
12 Pages
File Size
264.6 kB
MFG CO.
Renesas Electronics
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 44 A)
• Low input capacitance
Ciss = 7600 pF TYP.
• Built-in gate protection diode
Part Name
Description
PDF
MFG CO.
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