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K3378 Datasheet - Renesas Electronics

2SK3378 image

Part Name
K3378

Description
Silicon N Channel MOS FET High Speed Switching

Other PDF
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PDF
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page
7 Pages

File Size
135.3 kB

MFG CO.
Renesas
Renesas Electronics Renesas

Features
•  Low on-resistance
   RDS= 2.7Ω typ. (VGS= 10 V, ID= 50 mA)
   RDS= 4.7Ω typ. (VGS= 4 V, ID= 20 mA)
•  4 V gate drive device.
•  Small package (CMPAK)

Page Link's: 1  2  3  4  5  6  7 

Part Name
Description
PDF
MFG CO.
2SK3215
Silicon N Channel MOS FET High Speed Switching
View
Hitachi -> Renesas Electronics
2SK3349
Silicon N Channel MOS FET High Speed Switching
View
Hitachi -> Renesas Electronics
2SK3348
Silicon N Channel MOS FET High Speed Switching
View
Renesas Electronics
2SK3287
Silicon N Channel MOS FET High Speed Switching
View
Renesas Electronics
2SK3380
Silicon N Channel MOS FET High Speed Switching
View
Hitachi -> Renesas Electronics
2SK3287
Silicon N Channel MOS FET High Speed Switching
View
Hitachi -> Renesas Electronics
2SK3289
Silicon N Channel MOS FET High Speed Switching
View
Hitachi -> Renesas Electronics
2SK3288
Silicon N Channel MOS FET High Speed Switching
View
Hitachi -> Renesas Electronics
2SK3378
Silicon N Channel MOS FET High Speed Switching
View
Hitachi -> Renesas Electronics
2SK556
Silicon N-Channel MOS FET HIGH SPEED SWITCHING
View
Hitachi -> Renesas Electronics

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