2SK3287 Datasheet - Hitachi -> Renesas Electronics
Part Name
2SK3287
Other PDF
no available.
PDF
page
8 Pages
File Size
39 kB
MFG CO.
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
FEATUREs
• Low on-resistance
RDS= 1.26 Ωtyp. (VGS= 10 V , ID= 150 mA)
RDS= 2.8 Ωtyp. (VGS= 4 V , ID= 50 mA)
• 4 V gate drive device.
• Small package (MPAK)
Part Name
Description
PDF
MFG CO.
Share Link: