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IS41LV16257B-35K Datasheet - Integrated Silicon Solution

IS41LV16257B-35K image

Part Name
IS41LV16257B-35K

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page
20 Pages

File Size
122.2 kB

MFG CO.
ISSI
Integrated Silicon Solution ISSI

DESCRIPTION
The ISSI IS41LV16257B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices ideal for use in 16- and 32-bit wide data bus systems.


FEATURES
• Fast access and cycle time
• TTL compatible inputs and outputs
• Refresh Interval: 512 cycles/8 ms
• Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Lead-free available

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Part Name
Description
PDF
MFG CO.
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
Integrated Circuit Solution Inc
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
Integrated Silicon Solution
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Integrated Circuit Solution Inc
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Integrated Silicon Solution
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Integrated Silicon Solution
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Integrated Circuit Solution Inc
256K x 16 DYNAMIC RAM FAST PAGE MODE
Taiwan Memory Technology
4M x 4 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
Integrated Circuit Solution Inc
4M x 4 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
Integrated Silicon Solution
256K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
AMIC Technology

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