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IC41C16256 Datasheet - Integrated Circuit Solution Inc

IC41C16256 image

Part Name
IC41C16256

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21 Pages

File Size
203 kB

MFG CO.
ICSI
Integrated Circuit Solution Inc ICSI

DESCRIPTION
The ICSI IC41C16256 and IC41LV16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. The IC41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IC41C16256 ideal for use in 16-, 32-bit wide data bus systems.
These features make the IC41C16256and IC41LV16256 ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications.
The IC41C16256 is packaged in a 40-pin 400mil SOJ and 400mil TSOP-2.


FEATURES
• Extended Data-Out (EDO) Page Mode access cycle
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval: 512 cycles /8 ms
• Refresh Mode: RAS-Only, CAS-before-RAS (CBR), Hidden
• Single power supply:
   5V ± 10% (IC41C16256)
   3.3V ± 10% (IC41LV16256)
• Byte Write and Byte Read operation via two CAS
• Industrail Temperature Range -40oC to 85oC
• Pb-free package is available

 

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Part Name
Description
PDF
MFG CO.
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Integrated Silicon Solution
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Integrated Silicon Solution
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Integrated Circuit Solution Inc
256K x 16 DYNAMIC RAM EDO PAGE MODE
Taiwan Memory Technology
256K x 16 DYNAMIC RAM EDO PAGE MODE
Taiwan Memory Technology
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Integrated Silicon Solution
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Integrated Silicon Solution
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Integrated Circuit Solution Inc
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Integrated Circuit Solution Inc
256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
AMIC Technology

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