datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  International Rectifier  >>> IRGIB7B60KD PDF

IRGIB7B60KD Datasheet - International Rectifier

IRGIB7B60KD image

Part Name
IRGIB7B60KD

Other PDF
  no available.

PDF
DOWNLOAD     

page
12 Pages

File Size
427.5 kB

MFG CO.
IR
International Rectifier IR

Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.


Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Part Name
Description
PDF
MFG CO.
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode ( Rev : 2013 )
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Infineon Technologies
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier

Share Link: GO URL

Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]