IRGIB7B60KD View Datasheet(PDF) - International Rectifier
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Description
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IRGIB7B60KD
International Rectifier
IRGIB7B60KD Datasheet PDF : 12 Pages
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IRGIB7B60KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
Ref.Fig.
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.57 — V/°C VGE = 0V, IC = 1mA (25°C-150°C)
— 1.8 2.2
IC = 8.0A, VGE = 15V, TJ = 25°C
5,6,7
VCE(on)
Collector-to-Emitter Voltage
— 2.2 2.5 V IC = 8.0A, VGE = 15V, TJ = 150°C
9,10,11
— 2.3 2.5
IC = 8.0A, VGE = 15V, TJ = 175°C
VGE(th)
Gate Threshold Voltage
3.5 4.5 5.5 V VCE = VGE, IC = 250µA
9,10,11
∆VGE(th)/∆TJ Threshold Voltage temp. coefficient
— -9.5 — mV/°C VCE = VGE, IC = 1mA (25°C-150°C)
12
gfe
Forward Transconductance
— 3.7 — S VCE = 50V, IC = 8.0A, PW = 80µs
— 1.0 150
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
— 200 500 µA VGE = 0V, VCE = 600V, TJ = 150°C
— 720 1100
VGE = 0V, VCE = 600V, TJ = 175°C
VFM
Diode Forward Voltage Drop
— 1.25 1.45 V IF = 5.0A, VGE = 0V
8
— 1.20 1.40
IF = 5.0A, TJ = 150°C, VGE = 0V
— 1.20 1.30
IF = 5.0A, TJ = 175°C, VGE = 0V
IGES
Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V, VCE = 0V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
Qg
Total Gate Charge (turn-on)
— 29 44
IC = 8.0A
23
Qge
Gate-to-Emitter Charge (turn-on)
— 3.7 5.6 nC VCC = 400V
CT1
Qgc
Gate-to-Collector Charge (turn-on)
— 14 21
VGE = 15V
Eon
Turn-On Switching Loss
— 160 268
IC = 8.0A, VCC = 400V
CT4
Eoff
Turn-Off Switching Loss
Etot
Total Switching Loss
—
—
160 268
320 433
d µJ VGE = 15V, RG = 50Ω, L = 1.1mH
TJ = 25°C
td(on)
Turn-On delay time
— 23 27
IC = 8.0A, VCC = 400V
tr
Rise time
— 22 26 ns VGE = 15V, RG = 50Ω, L = 1.1mH
CT4
td(off)
Turn-Off delay time
— 140 150
TJ = 25°C
tf
Fall time
— 32 42
Eon
Turn-On Switching Loss
— 220 330
IC = 8.0A, VCC = 400V
CT4
Eoff
Turn-Off Switching Loss
Etot
Total Switching Loss
—
—
270 381
490 711
d µJ VGE = 15V, RG = 50Ω, L = 1.1mH
TJ = 150°C
13,15
WF1,WF2
td(on)
Turn-On delay time
— 22 27
IC = 8.0A, VCC = 400V
14,16
tr
Rise time
— 21 25 ns VGE = 15V, RG = 50Ω, L = 1.1mH
CT4
td(off)
Turn-Off delay time
— 180 198
TJ = 150°C
WF1
tf
Fall time
— 40 56
WF2
LE
Internal Emitter Inductance
— 7.5 — nH Measured 5mm from package
Cies
Input Capacitance
— 440 660
VGE = 0V
Coes
Output Capacitance
— 38 57 pF VCC = 30V
22
Cres
Reverse Transfer Capacitance
— 16 24
f = 1.0MHz
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
TJ = 150°C, IC = 54A, Vp = 600V
4
VCC=500V,VGE = +15V to 0V,RG = 50Ω CT2
SCSOA
Short Circuit Safe Operating Area
10 — — µs TJ = 150°C, Vp = 600V, RG = 100Ω
CT3
VCC=360V,VGE = +15V to 0V
WF4
ISC (Peak) Peak Short Circuit Collector Current
— 70 — A
WF4
Erec
Reverse Recovery Energy of the Diode — 100 133 µJ TJ = 150°C
17,18,19
trr
Diode Reverse Recovery Time
— 95 120 ns VCC = 400V, IF = 8.0A, L = 1.07mH
20,21
Irr
Peak Reverse Recovery Current
— 13 17 A VGE = 15V, RG = 50Ω
CT4,WF3
Qrr
Diode Reverse Recovery Charge
— 620 800 nC di/dt = 500A/µS
Note to are on page 12
2
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