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IRG4RC10UD Datasheet - International Rectifier

IRG4RC10UD image

Part Name
IRG4RC10UD

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10 Pages

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178.4 kB

MFG CO.
IR
International Rectifier IR

UltraFast CoPack IGBT


FEATUREs
• UltraFast: Optimized for medium operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-252AA package


Benefits
• Generation 4 IGBTs offer highest efficiencies available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing
• Lower losses than MOSFETs conduction and Diode losses

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Part Name
Description
PDF
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier

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