INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

FEATUREs
•High short circuit rating optimized for motor control, tsc=10µs, VCC = 720V , TJ= 125°C, VGE= 15V
•Combines low conduction losses with high switching speed
•Tighter parameter distribution and higher efficiency than previous generations
•IGBT co-packaged with HEXFRED^TM ultrafast, ultrasoft recovery antiparallel diodes

Benefits
•Latest generation 4 IGBT's offer highest power density motor controls possible
•HEXFRED^TM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce  noise, EMI and switching losses
•This part replaces the IRGPH50KD2 and IRGPH50MD2 products
•For hints see design tip 97003