INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Short Circuit Rated UltraFast IGBT

FEATUREs
●Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz, and Short Circuit Rated to 10µs @125°C, VGE= 15V
●Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
●IGBT co-packaged with HEXFRED^TM ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations
●Industry standard TO-247AC package

Benefits
●Generation 4 IGBTs offer highest efficiencies available
●HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing
●Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs