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IRG4BC20SDS Datasheet - International Rectifier

IRG4BC20SD-S image

Part Name
IRG4BC20SDS

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10 Pages

File Size
331.3 kB

MFG CO.
IR
International Rectifier IR

Features
• Extremely low voltage drop 1.4Vtyp. @ 10A
• S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
• Very Tight Vce(on) distribution
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard D2Pak package


Benefits
• Generation 4 IGBT's offer highest efficiencies available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing
• Lower losses than MOSFET's conduction and Diode losses

 

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Part Name
Description
PDF
MFG CO.
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
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Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier

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