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IRFR5410TRR Datasheet - Kersemi Electronic Co., Ltd.

IRFR5410TRL image

Part Name
IRFR5410TRR

Description

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page
10 Pages

File Size
762.7 kB

MFG CO.
KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI

Description
Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.


FEATUREs
● Advanced Planar Technology
● P-Channel MOSFET
● Low On-Resistance
● Dynamic dV/dT Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Repetitive Avalanche Allowed up to
   Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *


Part Name
Description
PDF
MFG CO.
AUTOMOTIVE GRADE
Infineon Technologies
AUTOMOTIVE GRADE
International Rectifier
AUTOMOTIVE GRADE
Infineon Technologies
AUTOMOTIVE GRADE
International Rectifier
AUTOMOTIVE GRADE
International Rectifier
AUTOMOTIVE GRADE
Infineon Technologies
AUTOMOTIVE GRADE
International Rectifier
AUTOMOTIVE GRADE
Infineon Technologies
AUTOMOTIVE GRADE
Kersemi Electronic Co., Ltd.
AUTOMOTIVE GRADE
Infineon Technologies

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