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AUIRLR024N Datasheet - International Rectifier

AUIRLR024N image

Part Name
AUIRLR024N

Description

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page
13 Pages

File Size
298.6 kB

MFG CO.
IR
International Rectifier IR

Description
Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.


FEATUREs
● Advanced Planar Technology
● Low On-Resistance
● Logic-Level Gate Drive
● Dynamic dV/dT Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Part Name
Description
PDF
MFG CO.
AUTOMOTIVE GRADE
Infineon Technologies
AUTOMOTIVE GRADE
International Rectifier
AUTOMOTIVE GRADE
Infineon Technologies
AUTOMOTIVE GRADE
International Rectifier
AUTOMOTIVE GRADE
Infineon Technologies
AUTOMOTIVE GRADE
International Rectifier
AUTOMOTIVE GRADE
Infineon Technologies
AUTOMOTIVE GRADE
Kersemi Electronic Co., Ltd.
AUTOMOTIVE GRADE
Infineon Technologies
AUTOMOTIVE GRADE
Kersemi Electronic Co., Ltd.

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