IPD060N03LG Datasheet PDF , Infineon Technologies : OptiMOS™3 Power-Transistor, 30 V

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IPD060N03LG(2020) Datasheet - Infineon Technologies

IPD060N03LG image

Part Name

IPD060N03LG

Description

OptiMOS™3 Power-Transistor, 30 V

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page

11 Pages

File Size

738.5 kB

MFG CO.

Infineon Technologies

Infineon

Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x RDS(on)product (FOM)
• Very low on-resistance RDS(on)
• Avalanche rated
• Pb-free plating
• Halogen-free according to IEC61249-2-21
• Avalanche rated
• Pb-free lead plating : RoHS compliant

Part Name

Description

PDF

MFG CO.

OptiMOS™3 Power-Transistor, 30 V ( Rev : 2020 )

Infineon Technologies

30 V, 3 A PNP low VCEsat (BISS) transistor

Nexperia B.V. All rights reserved

30 V, 3 A NPN low VCEsat (BISS) transistor

Nexperia B.V. All rights reserved

30 V, 3 A PNP low VCEsat (BISS) transistor

NXP Semiconductors.

30 V, 3 A NPN low VCEsat (BISS) transistor

NXP Semiconductors.

30 V, 3 A NPN low VCEsat (BISS) transistor

Philips Electronics

30 V, 3 A NPN low VCEsat (BISS) transistor ( Rev : 2010 )

NXP Semiconductors.

30 V, 3 A, Low VCE(sat) NPN Transistor ( Rev : 2005 )

ON Semiconductor

30 V, 3 A PNP low VCEsat (BISS) transistor

Philips Electronics

30 V, 3 A NPN low VCEsat (BISS) transistor

Nexperia B.V. All rights reserved

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