MFG CO.
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Nexperia B.V. All rights reserved
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General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
NPN complement: PBSS4330PA.
FEATUREs and benefits
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
• Exposed heat sink for excellent thermal and electrical conductivity
• Leadless small SMD plastic package with medium power capability
APPLICATIONs
• Loadswitch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
Part Name
Description
PDF
MFG CO.
30 V, 3 A PNP low VCEsat (BISS) transistor
Philips Electronics
30 V, 3 A PNP low VCEsat (BISS) transistor
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30 V, 3 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
30 V, 3 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
30 V, 3 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
30 V, 3 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
30 V, 3 A NPN low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
30 V, 3 A NPN low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
30 V, 3 A NPN low VCEsat (BISS) transistor
NXP Semiconductors.
30 V, 3 A NPN low VCEsat (BISS) transistor
Philips Electronics