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GP30B120KD-EP Datasheet - International Rectifier

GP30B120KD image

Part Name
GP30B120KD-EP

Other PDF
  no available.

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page
13 Pages

File Size
299.5 kB

MFG CO.
IR
International Rectifier IR

Features
• Low VCE(on) Non Punch Through (NPT) Technology
• Low Diode VF (1.76V Typical @ 25A & 25°C)
• 10 μs Short Circuit Capability
• Square RBSOA
• Ultrasoft Diode Recovery Characteristics
• Positive VCE(on) Temperature Coefficient
• Extended Lead TO-247AD Package
• Lead-Free


Benefits
• Benchmark Efficiency for Motor Control Applications
• Rugged Transient Performance
• Low EMI
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation
• Longer leads for Easier Mounting


Part Name
Description
PDF
MFG CO.
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Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier

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