Near infrared image sensors (0.9 to 1.67 μm / 2.55 μm)

The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a timing generator formed on a CMOS chip. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the near infrared spectral range. The package is hermetically sealed for high reliability.

FEATUREs
• Wide dynamic range
• Low noise and low dark current
• Two selectable conversion efficiencies
• Anti-saturation circuit
• CDS circuit
• Offset compensation circuit
• Simple operation (by built-in timing generator)
• High resolution: 25 μm pitch (512 ch)
• Low cross-talk
• 256 ch: 1 video line
   512 ch: 2 video lines
• Two selectable conversion efficiencies