[Excelics]

High Efficiency Heterojunction Power FET
   
• +29.5dBm TYPICAL OUTPUT POWER
• 9.5dB TYPICAL POWER GAIN AT 18GHz
• 0.3 X 1200 MICRON RECESSED
    “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION
    PROFILE PROVIDES EXTRA HIGH POWER
    EFFICIENCY, AND HIGH RELIABILITY
• Idss SORTED IN 30mA PER BIN RANGE