EPA120D Datasheet - Excelics Semiconductor, Inc.
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EPA120D
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2 Pages
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MFG CO.
Excelics Semiconductor, Inc.
FEATURES
• +29.5dBm TYPICAL OUTPUT POWER
• 19.5dB TYPICAL POWER GAIN AT 2GHz
• 0.5 X 1200 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION AND PLATED HEAT SINK
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
• Idss SORTED IN 30mA PER BIN RANGE
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MFG CO.
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